METHODS FOR FORMING A ROUND BOTTOM SILICON TRENCH RECESS FOR SEMICONDUCTOR APPLICATIONS

摘要

Embodiments of the present invention provide methods to etching a recess channel in a semiconductor substrate, for example, a silicon containing material. In one embodiment, a method of forming a recess structure in a semiconductor substrate includes transferring a silicon substrate into a processing chamber having a patterned photoresist layer disposed thereon exposing a portion of the substrate, providing an etching gas mixture including a halogen containing gas and a Cl2 gas into the processing chamber, supplying a RF source power to form a plasma from the etching gas mixture, supplying a pulsed RF bias power in the etching gas mixture, and etching the portion of the silicon substrate exposed through the patterned photoresist layer in the presence of the plasma.

主权项

1. A method of forming a recess structure in a semiconductor substrate, comprising:
transferring a silicon substrate into a processing chamber having a patterned photoresist layer disposed thereon exposing a portion of the substrate; providing an etching gas mixture including a halogen containing gas and a Cl2 gas into the processing chamber; supplying a RF source power to form a plasma from the etching gas mixture; and supplying a pulsed RF bias power in the etching gas mixture; and etching the portion of the silicon substrate exposed through the patterned photoresist layer in the presence of the plasma.