| 摘要 |
An elastic wave device includes a lithium niobate film, a supporting substrate, a high-acoustic-velocity film located on the supporting substrate and configured so that the acoustic velocity of a propagating bulk wave is higher than the acoustic velocity of an elastic wave that propagates on the lithium niobate film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and configured so that the acoustic velocity of the propagating bulk wave is lower than the acoustic velocity of the bulk wave that propagates in the lithium niobate film, the lithium niobate film being stacked on the low-acoustic-velocity film, and an IDT electrode located on either side of the lithium niobate film. When the lithium niobate film has Euler angles of (0°±5°, θ, 0°), θ is in the range of about 0° to about 8° and about 57° to about 180°. |
