LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF

摘要

A light emitting diode includes a semiconductor epitaxial stack structure, a first transparent conductive layer and at least one second transparent conductive layer. The semiconductor epitaxial stack structure includes a first semiconductor layer, an active layer and a second semiconductor layer. The active layer is disposed on a portion of the second semiconductor layer. The first semiconductor layer is disposed on the active layer. The first transparent conductive layer is disposed on the first semiconductor layer, and includes plural first crystalline particles, wherein the average size thereof is d1. The second transparent conductive layer is disposed on the first transparent conductive layer, and includes plural second crystalline particles, wherein the average size thereof is d2, and d1 is greater than d2.

主权项

1. A light emitting diode, comprising:
a semiconductor epitaxial stack structure, having a first semiconductor layer, an active layer and a second semiconductor layer, wherein the active layer is disposed on a portion of the second semiconductor layer and the first semiconductor layer is disposed on the active layer; a first transparent conductive layer, disposed on the first semiconductor layer, wherein the first transparent conductive layer comprises a plurality of first crystalline particles, and wherein the average size thereof is d1; and a second transparent conductive layer, disposed on the first transparent conductive layer, wherein the second transparent conductive layer comprises a plurality of second crystalline particles, and wherein the average size thereof is d2, and d1 is greater than d2.