| 摘要 |
PROBLEM TO BE SOLVED: To reduce a switching loss by applying, in appropriate timing, a gate drive pulse to a semiconductor element in which a transistor structure and a diode structure are formed in the same semiconductor substrate.SOLUTION: A pulse control part 27 of drive ICs 24A and 24B, when determining that a current flows in semiconductor elements 1A and 1B in a forward direction of a diode element 6 during an H level of PWM signals FH and FL when electric conduction is switched between upper and lower arms, brings gate drive signals SGH and SGL to an H level from a time lapse point of a first time T1 to a time lapse point of a second time T2 by using a falling time point of the PWM signals FH and FL as a start point (pulse control). The larger the current flows in the semiconductor elements 1A and 1B during the H level of the PWM signals FH and FL, the longer a pulse width Tw of the gate drive pulse is set. |
