SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with a structure which reduces a gate leakage current and in which an insulation film having an opening is formed on a nitride semiconductor and a gate electrode is formed on the opening and on the insulation film around opening.SOLUTION: A semiconductor device comprises: a first semiconductor layer 21 formed on a substrate 11 by a nitride semiconductor; a second semiconductor layer 22 formed on the first semiconductor layer 21 by a nitride semiconductor; an insulation film 30 having an opening 30a, which is formed on the second semiconductor layer 22; a source electrode 42 and a drain electrode 43 which are formed on the second semiconductor layer 22; and a gate electrode 41 formed on the second semiconductor layer 22 at the opening 30a, in which both of the insulation film 30 and the second semiconductor layer 22 near an interface between the insulation film 30 and the second semiconductor layer 22 contain carbon.