发明名称 |
SELF-IDENTIFYING MEMORY ERRORS |
摘要 |
A memory region can durably self-identify as being faulty when read. Information that would have been assigned to the faulty memory region can be assigned to another of that sized region in memory using a replacement encoding technique. For phase change memory, at least two fault states can be provided for durably self-identifying a faulty memory region; one state at a highest resistance range and the other state at a lowest resistance range. Replacement cells can be used to shift or assign data when a self-identifying memory fault is present. A memory controller and memory module, alone or in combination may manage replacement cell use and facilitate driving a newly discovered faulty cell to a fault state if the faulty cell is not already at the fault state. |
申请公布号 |
US2015033064(A1) |
申请公布日期 |
2015.01.29 |
申请号 |
US201313949227 |
申请日期 |
2013.07.24 |
申请人 |
Microsoft Corporation |
发明人 |
Davis John D.;Strauss Karin;Manasse Mark Steven;Gopalan Parikshit S.;Yekhanin Sergey |
分类号 |
G11C29/44 |
主分类号 |
G11C29/44 |
代理机构 |
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代理人 |
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主权项 |
1. A self-identifying error memory device, comprising:
a plurality of memory cells arranged as memory blocks, each memory cell comprising at least two valid states and a first durable fault state, wherein a cell in the first durable fault state self-identifies as being faulty. |
地址 |
Redmond WA US |