METHOD FOR FORMING FEATURES WITH SUB-LITHOGRAPHIC PITCH USING DIRECTED SELF-ASSEMBLY OF POLYMER BLEND

摘要

There is provided a manufacturing method of a semiconductor device including forming a first pattern of first features, according to a lithography process, in a photoresist layer disposed on a substrate, the lithography process having a minimum printable dimension and a minimum printable pitch, applying an additional layer on the photoresist layer having the first pattern formed therein, forming a second pattern of second features in the additional layer, the second features concentric with the first features, and etching portions of the substrate exposed through the second pattern. Further, in the provided method, the first features include geometrical features separated by a distance less than the dimension of minimum printable feature, and the geometrical features are disposed at a pitch less than the minimum printable pitch.

主权项

1. A manufacturing method of a semiconductor device, the manufacturing method comprising:
forming a first pattern of first features, according to a lithography process, in a photoresist layer disposed on a substrate, the lithography process having a minimum printable dimension and a minimum printable pitch; applying an additional layer on the photoresist layer having the first pattern formed therein; forming a second pattern of second features in the additional layer, the second features being concentric with the first features; and etching portions of the substrate exposed through the second pattern, the first features each comprise a geometrical feature separated by a distance less than the minimum printable dimension, and the geometrical features are disposed at a pitch less than the minimum printable pitch.