METHODS OF FABRICATING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES FABRICATED THEREBY

摘要

The method includes forming an array of first separation walls on an underlying layer. A block co-polymer (BCP) layer is formed to fill inside regions of the first separation walls and gaps between the first separation walls. The BCP layer is phase-separated to include first domains that provide second separation walls covering inner sidewalls and outer sidewalls of the first separation walls and second domains that are separated from each other by the first domains.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming an array of pillars over an underlying layer; forming a separation wall layer over the pillars and the underlying layer; forming a block co-polymer (BCP) layer over the separation wall layer to fill gaps between the pillars; and phase-separating the BCP layer into first and second domains, wherein the first domains include second separation walls formed over sidewalls of the first separation wall layer, and wherein the second domains are separated from the pillars by the first domains.