| 摘要 |
The present invention addresses the problem of providing a transistor including a gate electrode which has a highly smooth surface and can be formed in a simplified process. The transistor according to the present invention has a gate electrode (12), an insulating layer (13), a semiconductor layer (14), a source electrode (15), and a drain electrode (16) on a substrate (11). The gate electrode (12) is formed using a silver &bgr;-ketocarboxylate represented by the following general expression (1). |
