发明名称 CHALCOGENIDE ABSORBER LAYERS FOR PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME
摘要 <p>CHALCOGENIDE ABSORBER LAYERS FOR PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with electropositive the 10 material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second. 15 (No Suitable Figures) 16</p>
申请公布号 SG10201407862Q(A) 申请公布日期 2015.01.29
申请号 SG10201407862Q 申请日期 2010.11.24
申请人 AQT SOLAR, INC. 发明人 GIRT, EROL;MUNTEANU, MARIANA
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