发明名称 |
CHALCOGENIDE ABSORBER LAYERS FOR PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME |
摘要 |
<p>CHALCOGENIDE ABSORBER LAYERS FOR PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with electropositive the 10 material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second. 15 (No Suitable Figures) 16</p> |
申请公布号 |
SG10201407862Q(A) |
申请公布日期 |
2015.01.29 |
申请号 |
SG10201407862Q |
申请日期 |
2010.11.24 |
申请人 |
AQT SOLAR, INC. |
发明人 |
GIRT, EROL;MUNTEANU, MARIANA |
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