| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve productivity.SOLUTION: A semiconductor device manufacturing method comprises: preparing an Si substrate 1 having a flat part having a flat surface and a flat rear face, and a bevel part provided on an outer periphery of the flat part; and epitaxially growing an AlGaInN film 2 on the surface of the Si substrate 1; grinding the Si substrate 1 from the rear face to thin the Si substrate 1 after epitaxially growing the AlGaInN film 2. Processing amounts of a surface side and a rear face side of the bevel part are asymmetric with respect to an outermost end of the bevel part. A thickness of the flat part from the surface to the outermost end is thinner than a thickness of the flat part from the rear face to the outermost end. |
