| 摘要 |
PROBLEM TO BE SOLVED: To obtain a positive resist material, particularly a chemically amplified positive resist material, which has a high effect of suppressing diffusion of an acid and high resolution, exhibits a good pattern profile and edge roughness after exposure, and thereby, is particularly suitable as a material for forming a fine pattern for VLSI fabrication or a photomask by EB drawing or a material for forming a pattern for EB or EUV exposure.SOLUTION: The positive resist material includes the following polymeric compound as a base resin: the polymeric compound comprises a recurring unit in which a hydrogen atom in a carboxyl group and/or a phenolic hydroxyl group is replaced by an acid-labile group, and a recurring unit having a group expressed by general formula (1), and has a weight average molecular weight ranging from 1,000 to 500,000. In the formula, Rrepresents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; one of X and Y is a nitrogen atom and the other is a carbon atom; and m is 0 or 1. |
