| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystal production apparatus that can grow a nitride crystal of the group-III having a practical size without making a step complicated to manufacture a high-performance light emission diode, an optical device such as an LD, and an electronic device, and without using an expensive reaction vessel.SOLUTION: A crystal production apparatus includes a reaction vessel 101 containing a raw material, a feed pipe 108 for supplying the reaction vessel 101 with gas to react with the raw material to form a crystal, a heater 111 installed around the reaction vessel 101, and an outer vessel 112 for covering the heater 111 and the reaction vessel 101. The apparatus further includes pressure controllers 109 and 114 for reducing a pressure difference between a pressure in the space between the outer vessel 112 and the reaction vessel 101 and a pressure in the reaction vessel 101. |
