METHOD OF MAKING ALUMINUM-BASED GROUP III NITRIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method of making an aluminum-based group III nitride single crystal by which crystal quality can be enhanced by reducing an influence of one aluminum halide gas in an aluminum halide raw material gas by simple means.SOLUTION: The method of making an aluminum-based group III nitride single crystal includes a step of subjecting an aluminum halide gas and a nitrogen source gas to reaction on a base substrate by supplying the aluminum halide gas and nitrogen source gas onto the base substrate. The reaction between the aluminum halide gas and nitrogen source gas is carried out in the coexistence of the halogen-based gas in such a way that a halogen-based gas fraction (H) shown by expression (1) is 0.1 or larger and less than 1.0, and a growth speed of an aluminum-based group III nitride crystal is 10μm/h or higher. Here, (1) H=V/(V+V), where Vrepresents the supply amount of the halogen-based gas and Vrepresents the supply amount of the aluminum halide gas.