METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device using a semiconductor film containing a zinc oxide.SOLUTION: There is provided a method for manufacturing a semiconductor device. The semiconductor device comprises: a semiconductor film containing a zinc oxide and having a channel-forming region on a substrate; a gate-insulating film between the semiconductor film and a gate electrode; and a source electrode and a drain electrode electrically connected with the semiconductor film. The gate electrode is electrically connected with one of the source electrode and the drain electrode. The gate electrode is provided at a top or a bottom of the channel-forming region, and the gate electrode may be provided above the source electrode and the drain electrode.