主权项 |
1. A circuit for a memory cell, comprising:
a pair of cross-coupled inverters, wherein a first inverter in the pair is configured to drive a first node for the memory cell and a remaining second inverter in the pair is configured to drive a second node for the memory cell; a plurality of read ports configured to access the second node; a first write port including a write word line, a complement write word line, and a write bit line; a first transmission gate configured to couple the first node to the write bit line responsive to an assertion of the write word line and the complement write word line; and a power switch configured to isolate the first inverter from a power supply responsive to the assertion of the write word line, |