| 主权项 |
1. A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma, the plasma processing apparatus comprising:
a DC power supply configured to apply a DC voltage to the upper electrode; a ground electrode, provided within the processing chamber, configured to serve as a ground with respect to the DC voltage applied to the upper electrode; and an annular shield member provided outside the ground electrode, wherein a groove is formed into a downward recess with a first peripheral portion at an outer peripheral portion of the ground electrode, an upper end of the shield member is positioned above an upper end of the first peripheral portion of the ground electrode, and a protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode. |
