| 摘要 |
<p>There is disclosed a thin film device for epitaxial lift off comprising a handle and one or more straining layers disposed on the handle, wherein the one or more straining layers induce a curvature of the handle. There is also disclosed a method of fabricating a thin film device for epitaxial lift off comprising, depositing one or more straining layers on a handle, wherein the one or more straining layers induce at least one strain on the handle chosen from tensile strain, compressive strain and near-neutral strain. There is also disclosed a method for epitaxial lift off comprising, depositing an epilayer over a sacrificial layer disposed on a growth substrate; depositing one or more straining layers on at least one of the growth substrate and a handle; bonding the handle to the growth substrate; and etching the sacrificial layer.</p> |
