| 摘要 |
PURPOSE:To permit sufficient light intensity modulation with a low voltage by forming a CCD to a prescribed channel thickness and changing a coefft. of optical absorption by the electric field generated via a transfer electrode. CONSTITUTION:The thickness of the GaAs channel 12 of an undoped MQW layer on a semi-insulating GaAs substrate 11 forming the CCD is determined at the thickness smaller than do Broglie wavelength of electron. The voltage dependency of the change in the coefft. of optical absorption in the thickness direction of the channel 12 corresponding to the electric field generated by the opaque electrode 13 for charge transfer, the voltage impressed to the semi- transparent electrode and the transfer charge is thereby increased. As a result, the intensity of the light which is incident from above and emerges downward is sufficiently modulated with the low voltage.
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