FILM FORMING PROCESS AND FILM FORMING APPARATUS

摘要

In a film forming apparatus (10), plasma-assisted ALD sequences are carried out to form a nitride film on a substrate (W) through the nitration of the silicon (Si) resulting from dichlorosilane (DCS), and then the first to fourth gas-feeding processes and plasma-feeding processes are successively carried out as plasma-assisted post-treatment. The gas to be fed in the first to fourth gas-feeding processes in the plasma-assisted post-treatment is a modifier gas consisting of either a gas selected from among N2, NH3, Ar and H2 or a mixed gas obtained by suitably mixing some of these gases. After the completion of the plasma-assisted ALD sequences, a plasma formed from the modifier gas is fed onto the nitride film on the substrate (W) to improve the film quality of the nitride film.

主权项

1. A film forming process of atomic layer deposition (ALD) that forms a film by causing a first gas to be adsorbed on a substrate, and to be reacted with active species of a second gas using a film forming apparatus, the film forming process comprising:
a step in which the substrate is placed; an adsorption step in which a precursor gas is chemically adsorbed on a surface of the substrate to form an adsorption layer; a first reaction step in which a first active species is generated by generating plasma of a reaction gas, and the adsorption layer is reacted with the first active species to form a film; and a second reaction step in which a second active species is generated by generating plasma of a modifier gas, and the film is modified by the second active species.