发明名称 |
SUPERCONDUCTING THREE-TERMINAL DEVICE AND LOGIC GATES |
摘要 |
A three-terminal device that exhibits transistor-like functionality at cryogenic temperatures may be formed from a single layer of superconducting material. A main current-carrying channel of the device may be toggled between superconducting and normal conduction states by applying a control signal to a control terminal of the device. Critical- current suppression and device geometry are used to propagate a normal-conduction hotspot from a gate constriction across and along a portion of the main current-carrying channel. The three-terminal device may be used in various superconducting signal-processing circuitry. |
申请公布号 |
WO2014197047(A3) |
申请公布日期 |
2015.01.29 |
申请号 |
WO2014US23640 |
申请日期 |
2014.03.11 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
MCCAUGHAN, ADAM N.;BERGGREN, KARL K. |
分类号 |
H03K19/195 |
主分类号 |
H03K19/195 |
代理机构 |
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代理人 |
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地址 |
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