发明名称 MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To increase bubble transfer driving force and to stabilize bubble transfer characteristics by forming a soft ferromagnetic pattern on an ion implantation transfer pattern. CONSTITUTION:On the ion implantation pattern (IPT) constituting an ion implantation transfer line (I), a circular thin film 'Permalloy(R)' pattern (PT) 2 having a diameter smaller than the IPT and forming only a magnetic pole without transferring bubbles is formed through a spacer (SP). The transfer line (I) is formed as follows. Namely, a magnetic bubble magnetic film (LPE) is formed on a substrate (GGG), I<+> ions are implanted to the surface of the LPE to form an ion implantation layer (ION), and then a spacer (SP) 1 consisting of SiO2 is applied to the whole surface. Then, a conductor pattern (CON) is formed on the SP 1 and polyimide spacer (SP) 2 is applied to the whole surface. Then, magnetic bubble transferring patterns PT 1, PT 2 consisting of 'Permalloy(R)' are formed on the SP 2 and a passivation film is applied to the whole surface to form the transfer line I.
申请公布号 JPS63211188(A) 申请公布日期 1988.09.02
申请号 JP19870042627 申请日期 1987.02.27
申请人 HITACHI LTD;HITACHI DEVICE ENG CO LTD 发明人 HIROSHIMA MINORU;SAITO KATSUTOSHI;MAEDA TOSHIO
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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