Method Of Manufacturing An Extreme Ultraviolet (EUV) Mask And The Mask Manufactured Therefrom

摘要

Any defects in the reflective coating or absorber layer of an EUV mask are problematic in transferring a pattern of the EUV mask to a wafer since they produce errors in integrated circuit patterns on the wafer. In this regard, a method of manufacturing an EUV mask is provided according to various embodiments of the present disclosure. According to the method of the present disclosure, the defects in the EUV mask can be detected and repaired with an defect-free multilayer body. A substantially defect-free EUV mask can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.

主权项

1. A method of manufacturing an extreme ultraviolet (EUV) mask, the method comprising:
providing a workpiece having a substrate with a multilayer (ML) film on the substrate; inspecting for defects on a top surface of the workpiece; if a defect is found, determining a first volume including the defect wherein the first volume has a first area in the substrate, a second area on a top surface of the first ML film and a peripheral surface between the first area and the second area; removing the first volume from the ML film and the substrate to form an opening; preparing a ML body that is defect free and matches the first volume in size and shape; plugging the ML body into the opening in the ML film and the substrate; and forming an absorber layer on the ML film and the ML body.