INTEGRATED CIRCUITS HAVING DEVICE CONTACTS AND METHODS FOR FABRICATING THE SAME

摘要

Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a conductive plug that at least partially fills a contact seam void. The contact seam void is formed in a contact that extends through an ILD layer of dielectric material overlying a device region. A metallization layer is deposited overlying the contact.

主权项

1. A method for fabricating an integrated circuit having a device contact, the method comprising:
forming a conductive plug that at least partially fills a contact seam void formed in a contact that extends through an ILD layer of dielectric material overlying a device region; and depositing a metallization layer overlying the contact.