| 发明名称 |
SEMICONDUCTOR DEVICES WITH BALL STRENGTH IMPROVEMENT |
| 摘要 |
A semiconductor device includes a contact region over a substrate. The semiconductor device further includes a metal pad over the contact region. Additionally, the semiconductor device includes a post passivation interconnect (PPI) line over the metal pad, where the PPI line is in contact with the metal pad. Furthermore, the semiconductor device includes an under-bump-metallurgy (UBM) layer over the PPI line. Moreover, the semiconductor device includes a plurality of solder balls over the UBM layer, the plurality of solder balls being arranged at some, but not all, intersections of a number of columns and rows of a ball pattern. |
| 申请公布号 |
US2015028481(A1) |
申请公布日期 |
2015.01.29 |
| 申请号 |
US201414515346 |
申请日期 |
2014.10.15 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD |
发明人 |
YU Tsung-Yuan;CHEN Hsien-Wei;CHEN Ying-Ju;LIANG Shih-Wei |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a contact region over a substrate; a metal pad over the contact region; a post passivation interconnect (PPI) line over the metal pad, wherein the PPI line is in contact with the metal pad; an under-bump-metallurgy (UBM) layer over the PPI line; and a plurality of solder balls over the UBM layer, the plurality of solder balls being arranged at some, but not all, intersections of a number of columns and rows of a ball pattern. |
| 地址 |
Hsinchu TW |
