发明名称 TRICHLOROSILANE PRODUCTION
摘要 A process that includes combining hydrogen chloride, metallurgical grade silicon and a third gas, e.g., tetrachlorosilane, in a reactor, under reaction conditions that include a temperature of 250-400 C. and a pressure of 2-33 barg, for a time sufficient to convert metallurgical grade silicon to an exit gas that includes trichlorosilane.
申请公布号 US2015030520(A1) 申请公布日期 2015.01.29
申请号 US201314380725 申请日期 2013.03.13
申请人 CENTROTHERM PHOTOVOLTAICS USA, INC. 发明人 Dassel Mark William
分类号 C01B33/107 主分类号 C01B33/107
代理机构 代理人
主权项 1. A process comprising combining hydrogen chloride, metallurgical grade silicon and a third material (M3) selected from silicon tetrachloride, trichlorosilane, dichlorosilane, and hydrogen, in a reactor, under reaction conditions comprising a temperature of 250-400° C. and a pressure of 2-33 barg, for a time sufficient to convert metallurgical grade silicon to an exit gas comprising trichlorosilane.
地址 Poulsbo WA US