| 摘要 |
An array substrate. An active layer of the array substrate is formed by at least two metal oxide semiconductor layers (4, 5), wherein the at least two metal oxide semiconductor layers (4, 5) comprise a first metal oxide semiconductor layer (4) and a second metal oxide semiconductor layer (5). The first metal oxide semiconductor layer (4) is formed on a gate insulating layer (3), and an etching blocking layer (6) is formed on the second metal oxide semiconductor layer (5). The migration rate of the first metal oxide semiconductor layer (4) is greater than that of the second metal oxide semiconductor layer (5). Further provided are a manufacturing method for an array substrate, and a display device. |
