发明名称 MEMORY CIRCUIT AND METHOD OF OPERATING THE MEMORY CIRCUIT
摘要 A cache memory die includes a substrate, a predetermined number of sets of memory cells on the substrate, a first set of input/output terminals on a first surface of the cache memory die, and a second set of input/output terminals on a second surface of the cache memory die. The first set of input/output terminals are connected to a primary memory circuit outside the cache memory die. A portion of the second set of input/output terminals are compatible with the first set of input/output terminals.
申请公布号 KR101487588(B1) 申请公布日期 2015.01.29
申请号 KR20130000172 申请日期 2013.01.02
申请人 发明人
分类号 G11C5/02;G11C7/10 主分类号 G11C5/02
代理机构 代理人
主权项
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