CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

摘要

There is provided a method of cleaning an inside of a process chamber, which is formed by a reaction tube and a manifold configured to support the reaction tube and installed under a heater, after forming a stacked film of oxide and nitride films on a substrate in the process chamber by alternately performing forming the oxide film on the substrate and forming the nitride film thereon. The method includes supplying a hydrogen-free fluorine-based gas from a first nozzle, which is installed in the manifold to extend upward from the manifold to an inside of the reaction tube, to an inner wall of the reaction tube; and supplying a hydrogen fluoride gas from a second nozzle, which is installed in the manifold, to an inner wall of the manifold.

主权项

1. A cleaning method for cleaning an inside of a process chamber formed by a reaction tube installed inside a heater and a manifold configured to support the reaction tube and installed under the heater, alter forming a stacked film of oxide and nitride films on a substrate in the process chamber by alternately performing forming the oxide film and forming the nitride film, the act of forming the oxide film being performed by alternately supplying a first precursor gas to the substrate in the process chamber and supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate in the process chamber under a pressure less than atmospheric pressure once or more, the act of forming the nitride film being performed by alternately supplying a second precursor gas to the substrate in the process chamber and supplying a nitrogen-containing gas to the substrate in the process chamber once or more, comprising:
supplying a hydrogen-free fluorine-based gas from a first nozzle at least to an inner wall of the reaction tube, the first nozzle being installed in the manifold to extend upward from the manifold to an inside of the reaction tube; and supplying a hydrogen fluoride gas from a second nozzle at least to an inner wall of the manifold, the second nozzle being installed in the manifold.