发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce malfunction of a pass transistor.SOLUTION: A semiconductor device comprises a pass gate circuit having transistors (MP, MW, MC). The transistor MP functions as a pass transistor for connecting a signal line (INL) and a signal line (OUTL). The transistor MW connects a signal line (BL) for inputting a signal setting ON/OFF of the transistor MP and a node SN (gate of transistor MP). In the case where potential of INL is at a high-level when writing high-level potential to the node SN, potential of BL is set at potential higher than normal high-level potential. By doing this, even when potential of the node SN drops due to transition of INL from a high level to a low level, high potential is preliminarily written, the potential drop does not influence an operation of the transistor MP.
申请公布号 JP2015029261(A) 申请公布日期 2015.02.12
申请号 JP20140129964 申请日期 2014.06.25
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KUROKAWA YOSHIMOTO
分类号 H03K17/06;H03K17/687;H03K17/693;H03K19/177 主分类号 H03K17/06
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