发明名称 VOID FREE TUNGSTEN FILL IN DIFFERENT SIZED FEATURES
摘要 <p>PROBLEM TO BE SOLVED: To provide methods of depositing tungsten in different sized features on a substrate.SOLUTION: The methods involve depositing a first bulk layer of tungsten in the features, etching the deposited tungsten, depositing a second bulk tungsten, which is interrupted to treat the tungsten after the smaller features are completely filled, and resuming deposition of the second bulk layer after the treatment in order to deposit smaller, smoother tungsten grains into the large features. The methods also involve depositing tungsten in multiple cycles of deposition-etching-deposition, where each cycle targets a group of similarly sized features using an etching agent specific for that group, and depositing in groups from the smallest sized features to the largest sized features. The deposition produces smaller, smoother grains with void-free fill for a wide range of sized features in a substrate.</p>
申请公布号 JP2015029097(A) 申请公布日期 2015.02.12
申请号 JP20140150275 申请日期 2014.07.24
申请人 LAM RESEARCH CORPORATION 发明人 ANAND CHANDRASHEKAR;RAASHINA HUMAYUN
分类号 H01L21/768;C23C16/14;H01L21/8242;H01L23/522;H01L27/108 主分类号 H01L21/768
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