| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress a negative droop characteristic and to achieve high output operation in single fundamental lateral mode oscillation. <P>SOLUTION: A surface-emitting laser element includes: a resonator structure including an active layer 105, and a lower semiconductor DBR 103 and an upper semiconductor DBR 107 which are disposed through the resonator structure. In the upper semiconductor DBR 107, an oxidized layer 108a containing at least an oxide generated by oxidizing part of selected oxidized layer containing aluminum and having 30 nm thickness surrounds a current passing-through region 108b and an oxidized confinement structure capable of simultaneously confining an injected current and a lateral mode of oscillation light is included in the upper semiconductor DBR. The lower semiconductor DBR 103 is disposed on the substrate 101 side with respect to the resonator structure and has a second lower semiconductor DBR which is a light confinement reducing region for reducing light confinement in the lateral direction. Consequently, the negative droop characteristic can be suppressed and high output operation in the single fundamental lateral mode oscillation can be achieved. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
