| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of securing an active region of an IGBT region and improving a diode-reverse recovery withstand. <P>SOLUTION: In an extension direction of a trench 35, when a distance from a termination part 42a on a peripheral side of an IGBT region 10 in a first contact hole 42 to a termination part 31a on a peripheral side of an IGBT region 10 in a channel layer 31 is set up to be a, and a distance from a termination part 48a on a peripheral side of a diode region 20 in a second contact hole 48 to a termination part 31b on a peripheral side of a diode region 20 in a channel layer 31 is set up to be b, the following equation is satisfied: a>b. Therefore, in the IGBT region 10, holes can be efficiently extracted via the channel layer 31 during turn-off. On the other hand, in the diode region 20, the concentration of holes in a peripheral part of the second contact region 47 can be prevented, during reverse recovery of the diode device. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
