发明名称 半導体装置
摘要 <p>A semiconductor device having a transistor and a rectifier includes: a current path; a first main electrode having a rectifying function and arranged on one end of the current path; a second main electrode arranged on the other end of the current path; an auxiliary electrode arranged in a region of the current path between the first main electrode and the second main electrode; a third main electrode arranged on the one end of the current path apart from the first main electrode along a direction intersecting the current path; and a control electrode arranged in a region of the current path between the second main electrode and the third main electrode. The transistor includes the current path, the second main electrode, the third main electrode, and the control electrode. The rectifier includes the current path, the first main electrode, the second main electrode, and the auxiliary electrode.</p>
申请公布号 JP5672756(B2) 申请公布日期 2015.02.18
申请号 JP20100095130 申请日期 2010.04.16
申请人 发明人
分类号 H01L27/095;H01L21/28;H01L21/338;H01L21/8232;H01L27/06;H01L29/47;H01L29/778;H01L29/812;H01L29/861;H01L29/868;H01L29/872 主分类号 H01L27/095
代理机构 代理人
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