| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having improved characteristics of a leakage current, or the like. <P>SOLUTION: An SBD 10 has a GaN layer 13 grown epitaxially on a GaN substrate 11. An upper portion of the GaN layer 13 is in a projecting mesa section 13a, and a Schottky electrode 15 is formed on the mesa section 13a. A side 13c of the mesa section 13a is an m face, and a side 15b of the Schottky electrode 15 is formed along the m face. The side 13c of the mesa section 13a is subjected to wet etching after patterning by plasma etching. The side 13c is a smooth surface nearly vertical to a substrate surface by wet etching. The distance (x) between an edge 15a of the Schottky electrode 15 and an upper edge 13b of the mesa section 13a is not more than 2μm. With the structure, a field distribution shape is improved, thus improving a breakdown voltage. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
