| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of measuring the specific resistance value of a semiconductor wafer, capable of measuring the specific resistance value with high accuracy. <P>SOLUTION: A method of measuring the specific resistance value of a semiconductor wafer is provided with: electrode formation step S2 for forming a roughly circular metal electrode on a principal surface; imaging step S3 for imaging the image of the outer peripheral portion of the metal electrode by dividing it into a plurality of parts by an imaging device; area calculation step S4 for measuring a plurality of the coordinates of a boundary part between the metal electrode and the semiconductor wafer, by using the plurality of images of the metal electrode imaged in the imaging step S3 and calculating the area of the metal electrode, on the basis of a plurality of measured coordinates; C-V measuring step S5 for measuring the C-V characteristics of the semiconductor wafer, by using the semiconductor wafer and the metal electrode 18; and specific resistance value calculation step S6 for calculating the specific resistance value of the semiconductor wafer, on the basis of the area of the metal electrode calculated in the area calculation step S4 and the C-V characteristics measured in the C-V measuring step S5. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
