| 摘要 |
<p>The purpose of the present invention is to increase the photoelectric conversion efficiency of a semiconductor layer and the photoelectric conversion efficiency of a photoelectric conversion device using the semiconductor layer. Compound particles of one embodiment of the present invention contain a group I-B element, indium element, gallium element and a chalcogen element. The ratio of the atomic concentration of the gallium element relative to the total atomic concentration of the indium element and the gallium element is higher in the surface portion than in the central portion.</p> |
