SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a ferroelectric capacitor in which a surface of a ferroelectric film has good morphology.SOLUTION: A semiconductor device 1 comprises: a semiconductor substrate 11; a strontium ruthenium oxide film 22 formed on the semiconductor substrate 11; and a ferroelectric capacitor 30 including a lower electrode 23 formed on the strontium ruthenium oxide film 22, a perovskite-like ferroelectric film 24 formed on the lower electrode 23 and an upper electrode 25 formed on the perovskite-like ferroelectric film.