| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method, capable of enhancing an etching rate and also suppressing deterioration in an etching selection ratio, in phosphoric acid etching.SOLUTION: A substrate processing apparatus 1 includes: a sealed cup 3 having an internal space 2; a spin chuck 4 holding a wafer W in a horizontal position in the internal space 2 of the sealed cup 3; a phosphoric acid supply mechanism 35 supplying a phosphoric acid solution on a surface of the wafer W in order to form a liquid film 60 of a phosphoric acid solution on the surface of the wafer W held by the spin chuck 4; and a hot plate 24 for heating the liquid film 60 of the phosphoric acid solution. The liquid film 60 formed on the surface of the wafer W is heated by the hot plate 24, and, in concurrence with the heating of the liquid film 60, the internal space 2 of the sealed cup 3 is pressed by a nitrogen gas supply mechanism 50 in a sealed state.</p> |
