| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit increase in resistance value at a bonding part of a wiring board and a semiconductor chip.SOLUTION: A semiconductor device 10 comprises: a wiring board 20 having a connection pad P2; and a semiconductor chip 30 having a connection terminal 40 electrically connected to the connection pad P2 via a bonding member 50. The bonding member 50 includes: an intermetallic compound layer 51 which is provided at a boundary with the connection pad P2 and composed of a CuSn intermetallic compound; an intermetallic compound layer 52 which is provided at a boundary with the connection terminal 40 and composed of a CuSn intermetallic compound; an intermetallic compound layer 53 which is provided between the intermetallic compound layers 51, 52 and composed of CuSn; and Bi elements which are provided in the intermetallic compound layer 53 in a scattered manner.</p> |
