| 摘要 |
PURPOSE:To improve the irregularity in a surge resistance and to improve reliability and yield by isolating the Schottky barrier electrode of a junction surface with a substrate and a guard ring region by an insulating film. CONSTITUTION:The Schottky barrier electrode 5 of a junction surface with a substrate 1 and a guard ring 3 is isolated by an insulating film 4. With this configuration, invasion of Schottky barrier metal molecules is suppressed in crystal defect presented at a step, and a protective resistance of the region 3 is equivalently inserted to the crystal defect itself. Accordingly, charge concentration at the step scarcely occurs to improve surge resistance and its irregularity. |
