METHOD OF MANUFACTURE OF BIPOLAR TRANSISTOR AND FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHOD

摘要

PURPOSE: To reduce the manufacturing steps by doping second active regions in the same polarity as that of an epitaxial. layer and other first active regions of a polycrystalline Si layer in the reverse polarity to that of the epitaxial layer and connecting the epitaxial layer constructing the collector with the emitter by conductive external connectors. CONSTITUTION: Second active regions between insulation regions 23b are composed of a semiconductor oxide on one side of a poly-Si layer 20a and thick SiO2 layer 16 are doped with a dopant 26 of the same polarity as that of a dopant 6 of an epitaxial layer 7a to form bipolar emitters E and first active regions on the other side of the layer 20a are doped with a dopant 28 of the opposite polarity to that of the layer 7a to form a collector/emitter b of an FET. The layer 7a forming the bipolar collectors, collector/emitter B and emitter E are connected by conductive external connectors 33.