| 发明名称 |
BI-DIRECTIONAL ESD PROTECTION CIRCUIT |
| 摘要 |
An electrostatic discharge (ESD) device for protecting an input/output terminal of a circuit, the device comprising a first transistor with an integrated silicon-controlled rectifier (SCR) coupled between the input/output (I/O) terminal of the circuit and a node and a second transistor with an integrated silicon-controlled rectifier coupled between the node and a negative terminal of a supply voltage, wherein the silicon-controlled rectifier of the first transistor triggers in response to a negative ESD voltage and the silicon-controlled rectifier of the second transistor triggers in response to a positive ESD voltage. |
| 申请公布号 |
US2015103451(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
US201414514066 |
申请日期 |
2014.10.14 |
| 申请人 |
Texas Instruments Incorporated |
发明人 |
Pauletti Timothy Patrick;Pendharkar Sameer;Chen Wayne Tien-Feng;Brodsky Jonathan;Steinhoff Robert |
| 分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electrostatic discharge (ESD) device for protecting an input/output terminal of a circuit, the device comprising:
a first transistor with an integrated silicon-controlled rectifier (SCR) coupled between the input/output (I/O) terminal of the circuit and a node; a second transistor with an integrated silicon-controlled rectifier coupled between the node and a negative terminal of a supply voltage, wherein the silicon-controlled rectifier of the first transistor triggers in response to a negative ESD voltage and the silicon-controlled rectifier of the second transistor triggers in response to a positive ESD voltage; wherein the first transistor and the second transistor are configured as diode coupled transistors; and a communication driver device is coupled between the node and the negative terminal of the supply voltage. |
| 地址 |
Dallas TX US |
