ANISOTROPIC CONDUCTIVE FILM AND THE SEMICONDUCTOR DEVICE USING THEREOF

摘要

The present invention relates to an anisotropic conductive film and a semiconductor device using the same, and more specifically, to an anisotropic conductive film and a semiconductor device using the same having a three-layer structure including a first insulating layer, a conducting layer and a second insulating layer, and the slope (A) of a stress-deformation curve represented in expression 1 is 0-0.2 kgf/(mm^2·%) or less and the maximum stress value is 0.4 kgf/mm^2 or higher. In the expression 1, slope (A, unit : kgf/(mm^2·%)) = (1/2 S_(max)- S0) / x is satisfied, S_(max) is maximum stress, x is a deformation ratio (%) at 1/2 value of the maximum stress, S_0 is a stress value when a deformation ratio is 0. The slope (A) and the maximum stress value are adjusted to enable the control of initial physical properties of an anisotropic conductive film before curing, thereby pressurizing properties can be improved and facilitating the pressurizing process.