| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate where a silicon layer with high crystallinity is formed to be thick by using a solid-phase epitaxial growth method at a low temperature, and to increase crystal growth speed compared to a conventional vapor phase epitaxial growth method. <P>SOLUTION: A silicon layer is formed on a single crystal silicon layer disposed on a base substrate via an insulating layer so that a needle-like silicon layer which is a portion of an initial stage of deposition and whose arrangement of a crystal face is adjusted to the single crystal silicon layer is grown by a vapor phase epitaxial method. The other portion of the silicon layer is grown by the solid-phase epitaxial method with the needle-like silicon layer as a seed crystal. Thus, a semiconductor substrate with the thick single crystal and crystal silicon layers is manufactured. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
