| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of forming a low resistivity tungsten film with good uniformity and good adhesion to an underlying layer. <P>SOLUTION: A tungsten nucleation layer is formed using a pulsed nucleation layer process at low temperature. Thereafter, the deposited nucleation layer is treated prior to depositing a bulk tungsten fill. By the treatment, resistivity of the deposited tungsten film is lowered. In one embodiment, the nucleation layer is deposited by a boron-based chemistry without utilizing hydrogen. In another embodiment, the treatment includes a process of exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
