| 摘要 |
<p>A titanium doped ternary system silicate film is provided, wherein the titanium doped ternary system silicate film has the general formula of Ca 2-x MgSi 2 O 7 :xTi 4+ , where x has a value of 0.00017ˆ¼0.0256. The preparation method of the titanium doped ternary system silicate film and the application of the titanium doped ternary system silicate film obtained by the method in field emission devices, cathode ray tubes and/or electroluminescent devices are also provided.</p> |
