| 摘要 |
PROBLEM TO BE SOLVED: To achieve a fast operation of an eDRAM.SOLUTION: An eDRAM comprises: a selection MISFET (TR1) having a gate electrode G1 which becomes a word line WL, a source region SR1 and a drain region DR1; a source plug electrode PLGS connected to the source region SR1; and a drain plug electrode PLGD connected to the drain region DR1. The eDRAM further has: a capacitive plug electrode PLGC connected to the drain plug electrode PLGD; a bit line BL connected to the source plug electrode PLGS; a stopper film STP1 which covers the bit line BL; and a capacitive element CON which is formed on the stopper film STP1 and has a first electrode EL1, a dielectric film CINS and a second electrode EL2. The first electrode EL1 is connected with the capacitive plug electrode PLGC and a height of the capacitive plug electrode PLGC is equal to a height of the bit line BL. |
