发明名称 |
MANUFACTURING METHOD OF ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE |
摘要 |
A manufacturing method of an organic light emitting diode display device includes: forming a gate electrode on a display area of a substrate including a peripheral area; forming a gate insulating layer on the substrate; forming a semiconductor layer overlapping the gate electrode; forming source and drain electrodes on the semiconductor layer; forming a passivation layer on the source and drain electrodes, and the gate insulating layer; forming a first electrode connected to the drain electrode; forming an etching preventing layer on the gate insulating layer in the peripheral area; forming a pixel definition layer including an opening exposing the first electrode; forming a first organic layer in the opening and a second organic layer on the pixel definition layer and the etching preventing layer; removing the second organic layer on the etching prevention layer; removing the etching prevention layer; and forming a second electrode on the second organic layer. |
申请公布号 |
US2015171150(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
US201414327111 |
申请日期 |
2014.07.09 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
HA Nam |
分类号 |
H01L27/32;H01L51/00;H01L51/56 |
主分类号 |
H01L27/32 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method of an organic light emitting diode display device, comprising:
forming a gate electrode on a display area of a substrate comprising a peripheral area surrounding the display area; forming a gate insulating layer by depositing an inorganic insulating material on the gate electrode and the substrate; forming a semiconductor layer on the gate insulating layer in the display area, the semiconductor layer overlapping the gate electrode; forming source and drain electrodes on the semiconductor layer; forming a passivation layer on the source electrode, the drain electrode, and the gate insulating layer; forming a first electrode on the passivation layer and connected to the drain electrode; forming an etching preventing layer on the gate insulating layer in the peripheral area; forming a pixel definition layer on the passivation layer and the first electrode, the pixel definition layer comprising an opening exposing a portion of the first electrode; forming a first organic layer on exposed portion of the first electrode and a second organic layer on the pixel definition layer and the etching preventing layer; removing the second organic layer from the etching prevention layer; removing the etching prevention layer; and forming a second electrode on the first organic layer, the second organic layer, and the pixel definition layer. |
地址 |
Hwaseong-si KR |