发明名称 |
AIR GAP STRUCTURE INTEGRATION USING A PROCESSING SYSTEM |
摘要 |
A method for forming an air gap structure in an integrated layer stack includes dry etching a mold layer disposed on the stack in a processing system under vacuum. The mold layer is disposed between one or more interconnects, and the process of dry etching of the mold layer exposes at least a portion of the interconnects. The method also includes depositing a liner layer over the exposed portion of the interconnects. In another embodiment, a method for forming an air gap structure in an integrated layer stack includes dry etching an oxide mold layer disposed on the stack in an a first processing chamber in a processing system under vacuum. The method also includes depositing a low-k material liner layer over the interconnects, wherein the liner has a thickness of less than about 2 nanometers. The methods disclosed herein are performed in a processing system without breaking vacuum. |
申请公布号 |
US2015170956(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
US201414523523 |
申请日期 |
2014.10.24 |
申请人 |
Applied Materials, Inc. |
发明人 |
NAIK Mehul B.;REN He;CUI Zhenjiang |
分类号 |
H01L21/768;H01L21/311;H01L21/02 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming an air gap structure in an integrated layer stack, comprising:
dry etching a mold layer disposed on the integrated layer stack in a processing system under vacuum, wherein the mold layer is disposed between one or more interconnects and the process of dry etching of the mold layer exposes at least a portion of the one or more of the interconnects; and depositing a liner layer over the exposed portion of the one or more interconnects, wherein the dry etching and depositing the liner layer are performed in the processing system without breaking vacuum. |
地址 |
Santa Clara CA US |